Invention Grant
- Patent Title: Memory device upgrade
- Patent Title (中): 内存设备升级
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Application No.: US12229090Application Date: 2008-08-20
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Publication No.: US08428649B2Publication Date: 2013-04-23
- Inventor: Mei Yan , Robert C. Chang , Farshid Sabet-Sharghi , Po Yuan , Bahman Qawami
- Applicant: Mei Yan , Robert C. Chang , Farshid Sabet-Sharghi , Po Yuan , Bahman Qawami
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies Inc.
- Current Assignee: SanDisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: Brinks Hofer Gilson & Lione
- Main IPC: H04B1/38
- IPC: H04B1/38

Abstract:
Technology for replacing a first storage unit operatively coupled to a device is provided. Content of the first storage unit is sent to a new storage unit that serves as the replacement of the first storage unit. In one embodiment, the content is first sent to a trusted third-party server and then transferred from the server to the new storage unit. A portion of the content on the new storage unit is adjusted in one embodiment to maintain content security features that were implemented in the first storage unit. The upgrading can be performed under the control of a software entity that is installed on the device. In various embodiments, the first storage unit may be bound to a third storage unit prior to the upgrade process. In such cases, the process can include measures to bind the new storage unit to the third storage unit.
Public/Granted literature
- US20100048169A1 Memory device upgrade Public/Granted day:2010-02-25
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