Invention Grant
- Patent Title: Multi-port memory device with serial input/output interface
- Patent Title (中): 具有串行输入/输出接口的多端口存储器件
-
Application No.: US11523497Application Date: 2006-09-18
-
Publication No.: US08429319B2Publication Date: 2013-04-23
- Inventor: Chang-Ho Do
- Applicant: Chang-Ho Do
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR10-2005-0090858 20050928; KR10-2006-0032949 20060411
- Main IPC: G06F13/38
- IPC: G06F13/38

Abstract:
A multi-port memory device includes a plurality of serial I/O data pads for providing a serial input/output (I/O) data communication; a plurality of ports for performing the serial I/O data communication with external devices through the serial I/O data pads; a plurality of banks for performing a parallel I/O data communication with the ports; a plurality of first data buses for transferring first signals from the ports to the banks; a plurality of second data buses for transferring second signals from the banks to the ports; and a switching unit for connecting the first data buses with the second data buses in response to a control signal.
Public/Granted literature
- US20070070795A1 Multi-port memory device with serial input/output interface Public/Granted day:2007-03-29
Information query