Invention Grant
US08429494B2 Nonvolatile random access memory and nonvolatile memory system
有权
非易失性随机存取存储器和非易失性存储器系统
- Patent Title: Nonvolatile random access memory and nonvolatile memory system
- Patent Title (中): 非易失性随机存取存储器和非易失性存储器系统
-
Application No.: US12816685Application Date: 2010-06-16
-
Publication No.: US08429494B2Publication Date: 2013-04-23
- Inventor: Kenichi Nakanishi , Keiichi Tsutsui , Junichi Koshiyama
- Applicant: Kenichi Nakanishi , Keiichi Tsutsui , Junichi Koshiyama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-183517 20090806
- Main IPC: G11C29/00
- IPC: G11C29/00 ; H03M13/05 ; G06F11/10

Abstract:
A nonvolatile random access memory includes: a nonvolatile storage area that is randomly accessible and includes a data area to store data and an error-correcting-code area to store an error correcting code, the data area including at least one data area to which a data area unit size is assigned, the error-correcting-code area including at least one error-correcting-code area to which an error-correcting-code-area unit size is assigned; and a nonvolatile storage area controller to set a data size used when the at least one data area is accessed, as the data area unit size. The nonvolatile storage area controller manages the data area and the error-correcting-code area based on the set data area unit size and assigns the at least one error-correcting-code area with the error-correcting-code-area unit size to the at least one data area with the data area unit size based on the data area unit size.
Public/Granted literature
- US20110035646A1 NONVOLATILE RANDOM ACCESS MEMORY AND NONVOLATILE MEMORY SYSTEM Public/Granted day:2011-02-10
Information query