Invention Grant
- Patent Title: Through-silicon via structure and a process for forming the same
- Patent Title (中): 通硅结构及其形成方法
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Application No.: US12783973Application Date: 2010-05-20
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Publication No.: US08432038B2Publication Date: 2013-04-30
- Inventor: Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
- Applicant: Weng-Jin Wu , Yung-Chi Lin , Wen-Chih Chiou
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A through-silicon via (TSV) structure and process for forming the same are disclosed. A semiconductor substrate has a front surface and a back surface, and a TSV structure is formed to extend through the semiconductor substrate. The TSV structure includes a metal layer, a metal seed layer surrounding the metal layer, a barrier layer surrounding the metal seed layer, and a metal silicide layer formed in a portion sandwiched between the metal layer and the metal seed layer.
Public/Granted literature
- US20100314758A1 THROUGH-SILICON VIA STRUCTURE AND A PROCESS FOR FORMING THE SAME Public/Granted day:2010-12-16
Information query
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