Invention Grant
US08432762B2 Bitline sense amplifier, memory core including the same and method of sensing charge from a memory cell
有权
位线读出放大器，包括相同的存储器核心以及从存储器单元感测电荷的方法
- Patent Title: Bitline sense amplifier, memory core including the same and method of sensing charge from a memory cell
- Patent Title (中): 位线读出放大器，包括相同的存储器核心以及从存储器单元感测电荷的方法
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Application No.: US13006832Application Date: 2011-01-14
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Publication No.: US08432762B2Publication Date: 2013-04-30
- Inventor: Joung-Yeal Kim , Seong-Jin Jang , Jin-Seok Kwak
- Applicant: Joung-Yeal Kim , Seong-Jin Jang , Jin-Seok Kwak
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR2010-0015943 20100223
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A bitline sense amplifier includes a pre-sensing unit and an amplification unit. The pre-sensing unit is connected to a first bitline and a second bitline, and is configured to perform a pre-sensing operation by controlling a voltage level of the second bitline based on at least one pre-sensing voltage and variation of a voltage level of the first bitline. The amplification unit is configured to perform a main amplification operation by amplifying a pre-sensed voltage difference based on a first voltage signal and a second voltage signal. The pre-sensed voltage difference indicates a difference between the voltage level of the first bitline and the voltage level of the second bitline after the pre-sensing operation.
Public/Granted literature
- US20110205822A1 BITLINE SENSE AMPLIFIER, MEMORY CORE INCLUDING THE SAME AND METHOD OF SENSING CHARGE FROM A MEMORY CELL Public/Granted day:2011-08-25
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