Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13419851Application Date: 2012-03-14
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Publication No.: US08434689B2Publication Date: 2013-05-07
- Inventor: Keisuke Sato
- Applicant: Keisuke Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-158276 20110719
- Main IPC: G06K19/06
- IPC: G06K19/06

Abstract:
According to embodiments, a semiconductor memory device capable of transmission and reception of information by wireless communication is provided. The semiconductor memory device includes a radio antenna for performing the wireless communication, a nonvolatile semiconductor memory element that stores information to be transmitted and received via the radio antenna, a substrate on which the nonvolatile semiconductor memory element is mounted and a wiring pattern to be connected to the nonvolatile semiconductor memory element is formed, and a switching unit that switches between a state where the wireless communication is permitted and a state where the wireless communication is rejected.
Public/Granted literature
- US20130020395A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2013-01-24
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