Invention Grant
- Patent Title: Thin film forming apparatus and method
- Patent Title (中): 薄膜成膜装置及方法
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Application No.: US13157772Application Date: 2011-06-10
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Publication No.: US08435353B2Publication Date: 2013-05-07
- Inventor: Nobuyoshi Sato
- Applicant: Nobuyoshi Sato
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-134297 20100611
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
According to one embodiment, the thin film forming apparatus includes a boat capable of holding two wafers, in each of which a cutout portion is provided in an outer peripheral edge portion, in a groove portion for holding a wafer in a state where back surfaces face each other. Moreover, the thin film forming apparatus includes a reactor that accommodates the boat and form a coating on each of surfaces of the two wafers by a vapor deposition reaction. The positions in the groove portion, at which the two wafers are held, respectively, are displaced in a direction parallel to the surfaces of the wafers.
Public/Granted literature
- US20110306217A1 THIN FILM FORMING APPARATUS AND METHOD Public/Granted day:2011-12-15
Information query
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