Invention Grant
US08435389B2 RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
有权
高功率脉冲磁控溅射（HIPIMS）的RF衬底偏置
- Patent Title: RF substrate bias with high power impulse magnetron sputtering (HIPIMS)
- Patent Title (中): 高功率脉冲磁控溅射（HIPIMS）的RF衬底偏置
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Application No.: US11954490Application Date: 2007-12-12
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Publication No.: US08435389B2Publication Date: 2013-05-07
- Inventor: Stanislav Kadlec , Jürgen Weichart
- Applicant: Stanislav Kadlec , Jürgen Weichart
- Applicant Address: LI Balzers
- Assignee: OC Oerlikon Balzers AG
- Current Assignee: OC Oerlikon Balzers AG
- Current Assignee Address: LI Balzers
- Agency: Pearne & Gordon LLP
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/32 ; C25B9/00 ; C25B11/00 ; C25B13/00
Abstract:
An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cm2 is provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.
Public/Granted literature
- US20080135401A1 RF SUBSTRATE BIAS WITH HIGH POWER IMPULSE MAGNETRON SPUTTERING (HIPIMS) Public/Granted day:2008-06-12
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