Invention Grant
- Patent Title: Encapsulated sputtering target
- Patent Title (中): 封装溅射靶
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Application No.: US13397184Application Date: 2012-02-15
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Publication No.: US08435392B2Publication Date: 2013-05-07
- Inventor: Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
- Applicant: Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C14/00
- IPC: C23C14/00 ; C23C14/06 ; C23C14/08 ; C23C14/14

Abstract:
Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
Public/Granted literature
- US20120138457A1 ENCAPSULATED SPUTTERING TARGET Public/Granted day:2012-06-07
Information query
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