Invention Grant
US08435399B2 Formation of patterned media by selective anodic removal followed by targeted trench backfill
有权
通过选择性阳极去除形成图案化介质,然后进行靶向沟槽回填
- Patent Title: Formation of patterned media by selective anodic removal followed by targeted trench backfill
- Patent Title (中): 通过选择性阳极去除形成图案化介质,然后进行靶向沟槽回填
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Application No.: US12685334Application Date: 2010-01-11
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Publication No.: US08435399B2Publication Date: 2013-05-07
- Inventor: Ibro Takakovic , Steve Riemer , Jie Gong , Mark Thomas Kief , Ming Sun
- Applicant: Ibro Takakovic , Steve Riemer , Jie Gong , Mark Thomas Kief , Ming Sun
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Ladas & Parry, LLP
- Main IPC: C25F3/02
- IPC: C25F3/02 ; C25D5/02

Abstract:
A method is disclosed for defining discrete magnetic and non-magnetic regions on the magnetic film layer of a storage media substrate. The method applies anodic oxidation of a cobalt-containing magnetic film layer to remove cobalt, followed by controlled deposition of a non-magnetic matrix into the regions where the cobalt has been removed. Deposition may either be electrodeposition, collimated vacuum deposition, or other methods depending upon the composition of the non-magnetic matrix being deposited. The method may be performed in a single electrochemical cell.
Public/Granted literature
- US20110171425A1 FORMATION OF PATTERNED MEDIA BY SELECTIVE ANODIC REMOVAL FOLLOWED BY TARGETED TRENCH BACKFILL Public/Granted day:2011-07-14
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