Invention Grant
- Patent Title: Ion etching of growing InP nanocrystals using microwave
- Patent Title (中): 使用微波对生长InP纳米晶体的离子蚀刻
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Application No.: US13645855Application Date: 2012-10-05
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Publication No.: US08435418B2Publication Date: 2013-05-07
- Inventor: Geoffrey F. Strouse , Derek D. Lovingood
- Applicant: The Florida State University Research Foundation, Inc.
- Applicant Address: US FL Tallahassee
- Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee: The Florida State University Research Foundation, Inc.
- Current Assignee Address: US FL Tallahassee
- Agency: Smith & Hopen, P.A.
- Agent Robert J. Varkonyi; Anton J. Hopen
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
High quantum yield InP nanocrystals are used in the bio-technology, bio-medical, and photovoltaic, specifically IV, III-V and III-VI nanocrystal technological applications. InP nanocrystals typically require post-generation HF treatment. Combining microwave methodologies with the presence of a fluorinated ionic liquid allows Fluorine ion etching without the hazards accompanying HF. Growing the InP nanocrystals in the presence of the ionic liquid allows in-situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.
Public/Granted literature
- US20130043210A1 ION ETCHING OF GROWING InP NANOCRYSTALS USING MICROWAVE Public/Granted day:2013-02-21
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