Invention Grant
- Patent Title: Methods for forming a ruthenium-based film on a substrate
- Patent Title (中): 在基板上形成钌基膜的方法
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Application No.: US13010018Application Date: 2011-01-20
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Publication No.: US08435428B2Publication Date: 2013-05-07
- Inventor: Bin Xia , Ashutosh Misra
- Applicant: Bin Xia , Ashutosh Misra
- Applicant Address: US TX Dallas
- Assignee: Air Liquide Electronics U.S. LP
- Current Assignee: Air Liquide Electronics U.S. LP
- Current Assignee Address: US TX Dallas
- Agent Patricia E. McQueeney
- Main IPC: H01B1/12
- IPC: H01B1/12
Abstract:
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.
Public/Granted literature
- US20110171836A1 METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE Public/Granted day:2011-07-14
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