Invention Grant
- Patent Title: Dielectric device and method of manufacturing dielectric device
- Patent Title (中): 电介质器件及其制造方法
-
Application No.: US12727546Application Date: 2010-03-19
-
Publication No.: US08435645B2Publication Date: 2013-05-07
- Inventor: Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
- Applicant: Akira Shibue , Tomohiko Kato , Shinichiro Kakei , Yasunobu Oikawa , Kenji Horino
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JPP2009-074419 20090325
- Main IPC: B32B15/00
- IPC: B32B15/00 ; H01G4/008

Abstract:
A dielectric device comprises a substrate made of a metal and an oxide dielectric layer mounted on a surface of the substrate. The surface of the substrate has metal oxide regions distributed like islands, while the oxide dielectric layer is in close contact with the substrate through the metal oxide regions. Since adhesion is higher in an area where the substrate and the oxide dielectric layer are in close contact with each other through the metal oxide regions distributed like islands on the surface of the substrate, the adhesion between the substrate and oxide dielectric layer in the dielectric device is enhanced. As compared with a case where a rough surface is formed on a metal foil, the metal oxide region and the substrate are inhibited from forming a rough surface, whereby leakage characteristics can be kept from being deteriorated by the rough surface.
Public/Granted literature
- US20100260981A1 DIELECTRIC DEVICE AND METHOD OF MANUFACTURING DIELECTRIC DEVICE Public/Granted day:2010-10-14
Information query