Invention Grant
- Patent Title: Methods of correcting optical parameters in photomasks
- Patent Title (中): 修改光掩模光学参数的方法
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Application No.: US13072993Application Date: 2011-03-28
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Publication No.: US08435705B2Publication Date: 2013-05-07
- Inventor: Haek-seung Han , Dong-seok Nam , Sang-gyun Woo
- Applicant: Haek-seung Han , Dong-seok Nam , Sang-gyun Woo
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2010-0029349 20100331
- Main IPC: G03F1/70
- IPC: G03F1/70 ; G03F1/72

Abstract:
A method of correcting an optical parameter in a photomask is provided. The method includes providing a photomask, exposing the photomask, detecting an aerial image to estimate the photomask, and irradiating gas cluster ion beams to the photomask based on an estimation result to correct the optical parameter in the photomask in relation to the aerial image. The gas cluster ion beams may be irradiated to a front surface of the photomask on which a mask pattern is formed or a rear surface of the photomask on which the mask pattern is not formed.
Public/Granted literature
- US20110244374A1 Methods of Correcting Optical Parameters in Photomasks Public/Granted day:2011-10-06
Information query
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