Invention Grant
US08435718B2 Upper layer-forming composition and photoresist patterning method
有权
上层形成组合物和光致抗蚀剂图案化方法
- Patent Title: Upper layer-forming composition and photoresist patterning method
- Patent Title (中): 上层形成组合物和光致抗蚀剂图案化方法
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Application No.: US13272501Application Date: 2011-10-13
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Publication No.: US08435718B2Publication Date: 2013-05-07
- Inventor: Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
- Applicant: Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: JP2005-312775 20051027; JP2006-085223 20060327
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/11 ; G03F7/40
Abstract:
An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group. R1—O—R2 (1)
Public/Granted literature
- US20120028198A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD Public/Granted day:2012-02-02
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