Invention Grant
US08435723B2 Pattern forming method and device production method 有权
图案形成方法和装置制作方法

Pattern forming method and device production method
Abstract:
A pattern forming method includes coating, on a wafer, a negative resist and a positive resist which has a higher sensitivity; exposing the positive resist and the negative resist on the wafer with an image of a line-and-space pattern; and developing the positive resist and the negative resist in a direction parallel to a normal line of a surface of the wafer. A fine pattern, which exceeds the resolution limit of an exposure apparatus, can be formed by using the lithography process without performing the overlay exposure.
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