Invention Grant
- Patent Title: Pattern forming method and device production method
- Patent Title (中): 图案形成方法和装置制作方法
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Application No.: US12585079Application Date: 2009-09-02
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Publication No.: US08435723B2Publication Date: 2013-05-07
- Inventor: Yuichi Shibazaki , Shigeru Hirukawa
- Applicant: Yuichi Shibazaki , Shigeru Hirukawa
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Main IPC: G03F7/26
- IPC: G03F7/26

Abstract:
A pattern forming method includes coating, on a wafer, a negative resist and a positive resist which has a higher sensitivity; exposing the positive resist and the negative resist on the wafer with an image of a line-and-space pattern; and developing the positive resist and the negative resist in a direction parallel to a normal line of a surface of the wafer. A fine pattern, which exceeds the resolution limit of an exposure apparatus, can be formed by using the lithography process without performing the overlay exposure.
Public/Granted literature
- US20100068660A1 Pattern forming method and device production method Public/Granted day:2010-03-18
Information query
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