Invention Grant
US08435727B2 Method and system for modifying photoresist using electromagnetic radiation and ion implantation
有权
使用电磁辐射和离子注入修饰光致抗蚀剂的方法和系统
- Patent Title: Method and system for modifying photoresist using electromagnetic radiation and ion implantation
- Patent Title (中): 使用电磁辐射和离子注入修饰光致抗蚀剂的方法和系统
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Application No.: US12896036Application Date: 2010-10-01
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Publication No.: US08435727B2Publication Date: 2013-05-07
- Inventor: Ludovic Godet , Patrick M. Martin
- Applicant: Ludovic Godet , Patrick M. Martin
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a plasma sheath and ions therein. A shape of the boundary between the plasma and plasma sheath is modified using a plasma sheath modifier, so that a portion of the boundary facing the substrate is not parallel to a plane defined by the substrate. During a first exposure, the resist feature is exposed to electromagnetic radiation having a desired wavelength and the ions are accelerated across the boundary having the modified shape toward the resist features over an angular range.
Public/Granted literature
- US20120082942A1 METHOD AND SYSTEM FOR MODIFYING PHOTORESIST USING ELECTROMAGNETIC RADIATION AND ION IMPLANTATION Public/Granted day:2012-04-05
Information query
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