Invention Grant
- Patent Title: Method for manufacturing evaporation donor substrate and light-emitting device
- Patent Title (中): 制造蒸发供体基板和发光装置的方法
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Application No.: US13329624Application Date: 2011-12-19
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Publication No.: US08435811B2Publication Date: 2013-05-07
- Inventor: Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
- Applicant: Kohei Yokoyama , Takahiro Ibe , Takuya Tsurume , Koichiro Tanaka
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-338575 20071228; JP2008-026119 20080206
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/469

Abstract:
An evaporation donor substrate which enables only a desired evaporation material to be evaporated at the time of deposition by an evaporation method, and capable of reduction in manufacturing cost by increase in use efficiency of the evaporation material and deposition with high uniformity. An evaporation donor substrate capable of controlling laser light so that a desired position of an evaporation donor substrate is irradiated with the laser light in accordance with the wavelength of the emitted laser light at the time of evaporation. Specifically, an evaporation donor substrate in which a region which reflects laser light and a region which absorbs laser light at the time of irradiation with laser light having a wavelength of greater than or equal to 400 nm and less than or equal to 600 nm at the time of evaporation are formed.
Public/Granted literature
- US20120088324A1 Method for Manufacturing Evaporation Donor Substrate and Light-Emitting Device Public/Granted day:2012-04-12
Information query
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