Invention Grant
- Patent Title: Method for making light emitting diode
- Patent Title (中): 制造发光二极管的方法
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Application No.: US13288174Application Date: 2011-11-03
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Publication No.: US08435818B2Publication Date: 2013-05-07
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee: Tsinghua University,Hon Hai Precision Industry Co., Ltd.
- Current Assignee Address: CN Beijing TW New Taipei
- Agency: Altis Law Group, Inc.
- Priority: CN201110110761 20110429
- Main IPC: H01L22/00
- IPC: H01L22/00 ; H01L51/40

Abstract:
A method of fabricating a light emitting diode includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is located on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer grow in that order on the substrate. An upper electrode is deposited on the second semiconductor layer. The substrate is removed. A lower electrode is deposited on the first semiconductor layer.
Public/Granted literature
- US20120276670A1 METHOD FOR MAKING LIGHT EMITTING DIODE Public/Granted day:2012-11-01
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