Invention Grant
- Patent Title: Patterning electrode materials free from berm structures for thin film photovoltaic cells
- Patent Title (中): 图案化电极材料不含薄膜光伏电池的导电结构
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Application No.: US12962580Application Date: 2010-12-07
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Publication No.: US08435822B2Publication Date: 2013-05-07
- Inventor: Robert D. Wieting
- Applicant: Robert D. Wieting
- Applicant Address: US CA San Jose
- Assignee: Stion Corporation
- Current Assignee: Stion Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for forming a thin film photovoltaic device having patterned electrode films includes providing a soda lime glass substrate with an overlying lower electrode layer comprising a molybdenum material. The method further includes subjecting the lower electrode layer with one or more pulses of electromagnetic radiation from a laser source to ablate one or more patterns associated with one or more berm structures from the lower electrode layer. Furthermore, the method includes processing the lower electrode layer comprising the one or more patterns using a mechanical brush device to remove the one or more berm structures followed by treating the lower electrode layer comprising the one or more patterns free from the one or more berm structures. The method further includes forming a layer of photovoltaic material overlying the lower electrode layer and forming a first zinc oxide layer overlying the layer of photovoltaic material.
Public/Granted literature
- US20110073181A1 PATTERNING ELECTRODE MATERIALS FREE FROM BERM STRUCTURES FOR THIN FILM PHOTOVOLTAIC CELLS Public/Granted day:2011-03-31
Information query
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