Invention Grant
- Patent Title: Method of manufacturing semiconductor device and the semiconductor device
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Application No.: US12320316Application Date: 2009-01-23
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Publication No.: US08435839B2Publication Date: 2013-05-07
- Inventor: Yoshimi Egawa
- Applicant: Yoshimi Egawa
- Applicant Address: JP Yokohama
- Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee: Lapis Semiconductor Co., Ltd.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-034342 20080215
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor device which can reduce the number of times of resin-injection, thereby facilitating the miniaturization of the semiconductor device, and the semiconductor device. After resin is injected into a space between at least two second semiconductor chips flip-chip joined to a first semiconductor chip through an injection opening, the resin is hardened.
Public/Granted literature
- US20090209062A1 Method of manufacturing semiconductor device and the semiconductor device Public/Granted day:2009-08-20
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