Invention Grant
- Patent Title: Method for manufacturing flexible semiconductor device
- Patent Title (中): 柔性半导体器件的制造方法
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Application No.: US12681399Application Date: 2009-07-30
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Publication No.: US08435842B2Publication Date: 2013-05-07
- Inventor: Koichi Hirano , Seiichi Nakatani , Tatsuo Ogawa
- Applicant: Koichi Hirano , Seiichi Nakatani , Tatsuo Ogawa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JPP2008-200768 20080804
- International Application: PCT/JP2009/003615 WO 20090730
- International Announcement: WO2010/016206 WO 20100211
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method for manufacturing a flexible semiconductor device comprises (i) forming an insulating film on the upper surface of a resin film, (ii) forming a pattern of extraction electrodes on the upper surface of the resin film, (iii) forming a semiconductor layer on the insulating film in such a manner that the semiconductor layer is in contact with the pattern of extraction electrodes, and (iv) forming a sealing resin layer on the upper surface of the resin film in such a manner that the sealing resin layer covers the semiconductor layer and the pattern of extraction electrodes, wherein at least one of the stepsof the above steps (i) to (iv) is carried out by a printing method. With this manufacturing method, various layers can be formed by a simple printing process without using a vacuum process, photolithography, or the like.
Public/Granted literature
- US20100261321A1 METHOD FOR MANUFACTURING FLEXIBLE SEMICONDUCTOR DEVICE Public/Granted day:2010-10-14
Information query
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