Invention Grant
US08435843B2 Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
有权
用于制造高性能金属氧化物和金属氮氧化物薄膜晶体管的栅极电介质的处理
- Patent Title: Treatment of gate dielectric for making high performance metal oxide and metal oxynitride thin film transistors
- Patent Title (中): 用于制造高性能金属氧化物和金属氮氧化物薄膜晶体管的栅极电介质的处理
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Application No.: US13355316Application Date: 2012-01-20
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Publication No.: US08435843B2Publication Date: 2013-05-07
- Inventor: Yan Ye
- Applicant: Yan Ye
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, L.L.P.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
Embodiments of the present invention generally include TFTs and methods for their manufacture. The gate dielectric layer in the TFT may affect the threshold voltage of the TFT. By treating the gate dielectric layer prior to depositing the active channel material, the threshold voltage may be improved. One method of treating the gate dielectric involves exposing the gate dielectric layer to N2O gas. Another method of treating the gate dielectric involves exposing the gate dielectric layer to N2O plasma. Silicon oxide, while not practical as a gate dielectric for silicon based TFTs, may also improve the threshold voltage when used in metal oxide TFTs. By treating the gate dielectric and/or using silicon oxide, the threshold voltage of TFTs may be improved.
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