Invention Grant
- Patent Title: Semiconductor devices with raised extensions
- Patent Title (中): 具有凸起延伸的半导体器件
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Application No.: US13251757Application Date: 2011-10-03
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Publication No.: US08435846B2Publication Date: 2013-05-07
- Inventor: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- Applicant: Kangguo Cheng , Bruce B. Doris , Balasubramanian S. Haran , Ali Khakifirooz , Pranita Kulkarni
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/461 ; H01L29/76 ; H01L29/66
Abstract:
Transistor devices and methods of their fabrication are disclosed. In one method, a dummy gate structure is formed on a substrate. Bottom portions of the dummy gate structure are undercut. In addition, stair-shaped, raised source and drain regions are formed on the substrate and within at least one undercut formed by the undercutting. The dummy gate structure is removed and a replacement gate is formed on the substrate.
Public/Granted literature
- US20130082308A1 SEMICONDUCTOR DEVICES WITH RAISED EXTENSIONS Public/Granted day:2013-04-04
Information query
IPC分类:
