Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13346947Application Date: 2012-01-10
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Publication No.: US08435847B2Publication Date: 2013-05-07
- Inventor: Sung Kil Chun
- Applicant: Sung Kil Chun
- Applicant Address: KR Icheon-Si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-Si
- Priority: KR10-2011-0041130 20110429
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device and a method for fabricating the same are disclosed. A fin of the semiconductor device including a fin-shaped channel region is configured in the form of a non-uniform structure, and a leakage current caused by the electric field effect generated in the semiconductor device is prevented from being generated, resulting in an increased operation stability of the semiconductor device.
Public/Granted literature
- US20120273850A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2012-11-01
Information query
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