Method for manufacturing silicon carbide substrate

Invention Grant

US08435866B2 Method for manufacturing silicon carbide substrate 失效

Title translation: 碳化硅基板的制造方法

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Patent Title: Method for manufacturing silicon carbide substrate
Patent Title (中): 碳化硅基板的制造方法
Application No.: US13256991

Application Date: 2010-09-28
Publication No.: US08435866B2

Publication Date: 2013-05-07
Inventor: Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
Applicant: Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
Applicant Address: JP Osaka-shi, Osaka
Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee Address: JP Osaka-shi, Osaka
Agency: Drinker Biddle & Reath LLP
Priority: JP2010-024508 20100205
International Application: PCT/JP2010/066828 WO 20100928
International Announcement: WO2011/096109 WO 20110811
Main IPC: H01L21/306
IPC: H01L21/306 ; H01L21/304

Method for manufacturing silicon carbide substrate

Abstract:

At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.

Abstract(Chinese):

制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。表面层至少部分去除。在该去除步骤之后，背面和主表面彼此连接。

Public/Granted literature

US20120009761A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE Public/Granted day:2012-01-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）