Invention Grant
- Patent Title: Method of manufacturing semiconductor device and method of manufacturing electronic device
- Patent Title (中): 制造半导体器件的方法和制造电子器件的方法
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Application No.: US12888538Application Date: 2010-09-23
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Publication No.: US08435867B2Publication Date: 2013-05-07
- Inventor: Atsushi Fujishima , Haruhiko Harada
- Applicant: Atsushi Fujishima , Haruhiko Harada
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2009-243258 20091022
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the sealing body, and a dam bar. The foreign matter formed over (or adhered to) the surface of the lead can be reliably removed by washing the surface of the lead after the removal of the residual resin. Thus, in a subsequent plating step, the reliability (wettability, adhesion with the lead) of a plating film to be formed over the surface of the lead can be improved.
Public/Granted literature
- US20110097854A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING ELECTRONIC DEVICE Public/Granted day:2011-04-28
Information query
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