Invention Grant
- Patent Title: Method and apparatus for manufacturing semiconductor device
- Patent Title (中): 用于制造半导体器件的方法和装置
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Application No.: US12831604Application Date: 2010-07-07
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Publication No.: US08435872B2Publication Date: 2013-05-07
- Inventor: Tomonori Aoyama
- Applicant: Tomonori Aoyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2009-161229 20090707
- Main IPC: H01L21/26
- IPC: H01L21/26
Abstract:
According to one embodiment, in a method for manufacturing a semiconductor device, a surface region of a semiconductor substrate is modified into an amorphous layer. A microwave is irradiated to the semiconductor substrate in which the amorphous layer is formed in a dopant-containing gas atmosphere so as to form a diffusion layer in the semiconductor substrate. The dopant is diffused into the amorphous layer and is activated.
Public/Granted literature
- US20110008952A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-01-13
Information query
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