Invention Grant
US08435873B2 Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
有权
在硅化物界面处具有介电损耗的无保护的肖特基势垒二极管
- Patent Title: Unguarded Schottky barrier diodes with dielectric underetch at silicide interface
- Patent Title (中): 在硅化物界面处具有介电损耗的无保护的肖特基势垒二极管
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Application No.: US11757767Application Date: 2007-06-04
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Publication No.: US08435873B2Publication Date: 2013-05-07
- Inventor: Vladimir Frank Drobny
- Applicant: Vladimir Frank Drobny
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Alan A. R. Cooper; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
One embodiment of the invention relates to an unguarded Schottky barrier diode. The diode includes a cathode that has a recessed region and a dielectric interface surface that laterally extends around a perimeter of the recessed region. The diode further includes an anode that conforms to the recessed region. A dielectric layer extends over the dielectric interface surface of the cathode and further extends over a portion of the anode near the perimeter. Other devices and methods are also disclosed.
Public/Granted literature
- US20070287276A1 UNGUARDED SCHOTTKY BARRIER DIODES Public/Granted day:2007-12-13
Information query
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