Invention Grant
- Patent Title: Method for making group III nitride articles
- Patent Title (中): 制备III族氮化物制品的方法
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Application No.: US12085857Application Date: 2006-11-30
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Publication No.: US08435879B2Publication Date: 2013-05-07
- Inventor: Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
- Applicant: Andrew D. Hanser , Lianghong Liu , Edward A. Preble , Denis Tsvetkov , Nathaniel Mark Williams , Xueping Xu
- Applicant Address: US NC Raleigh
- Assignee: Kyma Technologies, Inc.
- Current Assignee: Kyma Technologies, Inc.
- Current Assignee Address: US NC Raleigh
- Agency: Bingham McCutchen LLP
- International Application: PCT/US2006/045965 WO 20061130
- International Announcement: WO2008/048303 WO 20080424
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
Group III (Al, Ga, In)N single crystals, articles and films useful for producing optoelectronic devices (such as light emitting diodes (LEDs), laser diodes (LDs) and photodetectors) and electronic devices (such as high electron mobility transistors (HEMTs)) composed of III-V nitride compounds, and methods for fabricating such crystals, articles and films.
Public/Granted literature
- US20100044718A1 Group III Nitride Articles and Methods for Making Same Public/Granted day:2010-02-25
Information query
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