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US08435895B2 Methods for stripping photoresist and/or cleaning metal regions 有权
剥离光刻胶和/或清洗金属区域的方法

Methods for stripping photoresist and/or cleaning metal regions
Abstract:
Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.
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