Invention Grant
- Patent Title: Method for reclaiming a surface of a substrate
- Patent Title (中): 回收基材表面的方法
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Application No.: US12658655Application Date: 2010-02-12
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Publication No.: US08435897B2Publication Date: 2013-05-07
- Inventor: Aziz Alami-Idrissi , Sebastien Kerdiles , Walter Schwarzenbach
- Applicant: Aziz Alami-Idrissi , Sebastien Kerdiles , Walter Schwarzenbach
- Applicant Address: FR Bernin
- Assignee: S.O.I.TEC Silicon on Insulator Technologies
- Current Assignee: S.O.I.TEC Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Edwards Wildman Palmer LLP
- Agent George W. Neuner; George N. Chaclas
- Priority: EP09290104 20090212
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary.
Public/Granted literature
- US20100200854A1 Method for reclaiming a surface of a substrate Public/Granted day:2010-08-12
Information query
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