Invention Grant
US08435906B2 Methods for forming conformal oxide layers on semiconductor devices
有权
在半导体器件上形成共形氧化物层的方法
- Patent Title: Methods for forming conformal oxide layers on semiconductor devices
- Patent Title (中): 在半导体器件上形成共形氧化物层的方法
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Application No.: US12691969Application Date: 2010-01-22
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Publication No.: US08435906B2Publication Date: 2013-05-07
- Inventor: Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
- Applicant: Agus S. Tjandra , Christopher S. Olsen , Johanes F. Swenberg , Yoshitaka Yokota
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, plasma oxidation is used to form a conformal oxide layer by controlling the temperature of the semiconductor substrate at below about 100° C. Methods for controlling the temperature of the semiconductor substrate according to one or more embodiments include utilizing an electrostatic chuck and a coolant and gas convection.
Public/Granted literature
- US20100216317A1 Methods for Forming Conformal Oxide Layers on Semiconductor Devices Public/Granted day:2010-08-26
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