Invention Grant
- Patent Title: Method for characterisation of dielectric layers by ultraviolet photo-emission spectroscopy
- Patent Title (中): 通过紫外光发射光谱表征介电层的方法
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Application No.: US13063059Application Date: 2009-09-15
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Publication No.: US08436300B2Publication Date: 2013-05-07
- Inventor: Eugenie Martinez , Cyril Guedj
- Applicant: Eugenie Martinez , Cyril Guedj
- Applicant Address: FR Paris
- Assignee: Commissariat à l'énergie atomique et aux ënergies alternatives
- Current Assignee: Commissariat à l'énergie atomique et aux ënergies alternatives
- Current Assignee Address: FR Paris
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR0856242 20080917
- International Application: PCT/EP2009/061897 WO 20090915
- International Announcement: WO2010/031748 WO 20100325
- Main IPC: G01J3/28
- IPC: G01J3/28
Abstract:
The electron affinity of thick dielectrics, of thickness greater than 10 nanometers, is measured by applying a polarization voltage varying between −4V and −40V, for example, and by taking several measuring points to determine a reference value of the photo-emission threshold (ES), applying linear regression to an adjustment straight line (10) linking the measured thresholds (11) to the respective values of the square root of the voltage V.
Public/Granted literature
- US20110233398A1 METHOD FOR CHARACTERISATION OF DIELECTRIC LAYERS BY ULTRAVIOLENT PHOTO-EMISSION SPECTROSCOPY Public/Granted day:2011-09-29
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