According to one embodiment, a method for manufacturing a memory device is disclosed. The method includes forming a silicon diode. At least an upper portion of the silicon diode is made of a semiconductor material containing silicon and doped with impurity. The method includes forming a metal layer made of a metal on the silicon diode. The method includes forming a metal nitride layer made of a nitride of the metal on the metal layer. The method includes forming a resistance change film. In addition, the method includes reacting the metal layer with the silicon diode and the metal nitride layer by heat treatment to form an electrode film containing the metal, silicon, and nitrogen.