Invention Grant
- Patent Title: ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device
- Patent Title (中): 含ZnO半导体层和含ZnO半导体发光器件
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Application No.: US12969304Application Date: 2010-12-15
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Publication No.: US08436351B2Publication Date: 2013-05-07
- Inventor: Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
- Applicant: Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, P.C.
- Priority: JP2007-178402 20070706
- Main IPC: H01L33/28
- IPC: H01L33/28
Abstract:
A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
Public/Granted literature
- US20110084275A1 ZnO-CONTAINING SEMICONDUCTOR LAYER AND ZnO-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2011-04-14
Information query
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