Invention Grant
- Patent Title: Semiconductor integrated circuit
- Patent Title (中): 半导体集成电路
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Application No.: US13156681Application Date: 2011-06-09
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Publication No.: US08436352B2Publication Date: 2013-05-07
- Inventor: Yoshinobu Kaneda , Koji Ishida
- Applicant: Yoshinobu Kaneda , Koji Ishida
- Applicant Address: BM Hamilton
- Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee: ON Semiconductor Trading, Ltd.
- Current Assignee Address: BM Hamilton
- Agency: Morrison & Foerster LLP
- Priority: JP2010-143488 20100624
- Main IPC: H01L23/58
- IPC: H01L23/58

Abstract:
Whether there is a defect such as chipping of a die or separation of a resin in a wafer level package is electrically detected. A peripheral wiring is disposed along four peripheries of a semiconductor substrate outside a circuit region and pad electrodes P1-P8. The peripheral wiring is formed on the semiconductor substrate and is made of a metal layer that is the same layer as or an upper layer of a metal layer forming the pad electrodes P1-P8, or a polysilicon layer. A power supply electric potential Vcc is applied to a first end of the peripheral wiring, while a ground electric potential Vss is applied to a second end of the peripheral wiring through a resistor R2. A detection circuit is connected to a connecting node N1 between the peripheral wiring and the resistor R2, and is structured to generate an anomaly detection signal ERRFLG based on an electric potential at the connecting node N1.
Public/Granted literature
- US20110315986A1 SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-12-29
Information query
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