Invention Grant
- Patent Title: Luminescence diode chip
- Patent Title (中): 发光二极管芯片
-
Application No.: US13124145Application Date: 2009-10-16
-
Publication No.: US08436394B2Publication Date: 2013-05-07
- Inventor: Peter Brick , Matthias Sabathil , Hagen Luckner
- Applicant: Peter Brick , Matthias Sabathil , Hagen Luckner
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102008054218 20081031
- International Application: PCT/DE2009/001436 WO 20091016
- International Announcement: WO2010/048921 WO 20100506
- Main IPC: H01L33/62
- IPC: H01L33/62

Abstract:
A luminescence diode chip includes a semiconductor layer sequence having an active layer suitable for generating electromagnetic radiation, and a first electrical connection layer, which touches and makes electrically conductive contact with the semiconductor layer sequence. The first electrical connection layer touches and makes contact with the semiconductor layer sequence in particular with a plurality of contact areas. In the case of the luminescence diode chip, an inhomogeneous current density distribution or current distribution is set in a targeted manner in the semiconductor layer sequence by means of an inhomogeneous distribution of an area density of the contact areas along a main plane of extent of the semiconductor layer sequence.
Public/Granted literature
- US20110215369A1 LUMINESCENCE DIODE CHIP Public/Granted day:2011-09-08
Information query
IPC分类: