A semiconductor light-emitting device (1) of the present invention includes a substrate (101); a laminate semiconductor layer (20) formed by sequentially laminating an n-type semiconductor layer (104), a light-emitting layer (105), and a p-type semiconductor layer (106) on the substrate (101); and a translucent electrode layer (109) formed on a top surface (106a) of the p-type semiconductor layer (106), wherein the translucent electrode layer (109) contains a dopant element, a content of the dopant element within the translucent electrode layer (109) decreases gradually toward the interface (109a) between the p-type semiconductor layer (106) and the translucent electrode layer (109), and in the translucent electrode layer (109) is formed a diffusion region in which an element constituting the p-type semiconductor layer (106) is diffused from the interface (109a) toward the inside of the translucent electrode layer (109).