Invention Grant
- Patent Title: Back diffusion suppression structures
- Patent Title (中): 反扩散抑制结构
-
Application No.: US12756088Application Date: 2010-04-07
-
Publication No.: US08436398B2Publication Date: 2013-05-07
- Inventor: Alexander Lidow , Robert Beach , Guang Y. Zhao , Jianjun Cao
- Applicant: Alexander Lidow , Robert Beach , Guang Y. Zhao , Jianjun Cao
- Applicant Address: US CA El Segundo
- Assignee: Efficient Power Conversion Corporation
- Current Assignee: Efficient Power Conversion Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L31/102
- IPC: H01L31/102 ; H01L29/66
Abstract:
An enhancement-mode GaN transistor, the transistor having a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate containing acceptor type dopant elements, and a diffusion barrier comprised of a III Nitride material between the gate and the buffer layer.
Public/Granted literature
- US20100258841A1 BACK DIFFUSION SUPPRESSION STRUCTURES Public/Granted day:2010-10-14
Information query
IPC分类:
