Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12709699Application Date: 2010-02-22
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Publication No.: US08436399B2Publication Date: 2013-05-07
- Inventor: Kazushi Nakazawa , Akiyoshi Tamura
- Applicant: Kazushi Nakazawa , Akiyoshi Tamura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-051181 20090304
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device according to the present invention includes a substrate; a nitride semiconductor layer formed above the substrate and having a laminated structure including at least three layers; a heterojunction bipolar transistor formed in a region of the nitride semiconductor layer; and a field-effect transistor formed in a region of the nitride semiconductor layer, the region being different from the region in which the heterojunction bipolar transistor is formed.
Public/Granted literature
- US20100224908A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-09
Information query
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