Invention Grant
- Patent Title: ROM cell circuit for FinFET devices
- Patent Title (中): 用于FinFET器件的ROM单元电路
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Application No.: US13471726Application Date: 2012-05-15
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Publication No.: US08436405B2Publication Date: 2013-05-07
- Inventor: Jhon Jhy Liaw
- Applicant: Jhon Jhy Liaw
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
The present disclosure provides a read only memory (ROM) cell array. The ROM cell array includes a plurality of fin active regions oriented in a first direction and formed on a semiconductor substrate; a plurality of gates formed on the plurality of fin active regions and oriented in a second direction perpendicular to the first direction; and a plurality of ROM cells formed by the plurality of fin active regions and the plurality of gates, the plurality of ROM cells being coded such that each cell of a first subset of ROM cells has a source electrically connected to a power line, and each cell of a second subset of ROM cells has a source electrically isolated.
Public/Granted literature
- US20120223395A1 ROM CELL CIRCUIT FOR FINFET DEVICES Public/Granted day:2012-09-06
Information query
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