Invention Grant
- Patent Title: Photoelectric conversion device and imaging system using photoelectric conversion device
- Patent Title (中): 光电转换装置及成像系统采用光电转换装置
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Application No.: US12168492Application Date: 2008-07-07
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Publication No.: US08436407B2Publication Date: 2013-05-07
- Inventor: Aiko Furuichi , Shigeru Nishimura
- Applicant: Aiko Furuichi , Shigeru Nishimura
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-189448 20070720
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.
Public/Granted literature
- US20090020796A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM USING PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2009-01-22
Information query
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