Invention Grant
- Patent Title: Multi-layer via-less thin film resistor
- Patent Title (中): 多层无通孔薄膜电阻
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Application No.: US12862594Application Date: 2010-08-24
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Publication No.: US08436426B2Publication Date: 2013-05-07
- Inventor: Olivier Le Neel , Calvin Leung
- Applicant: Olivier Le Neel , Calvin Leung
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics PTE Ltd.
- Current Assignee: STMicroelectronics PTE Ltd.
- Current Assignee Address: SG Singapore
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L23/62
- IPC: H01L23/62

Abstract:
The present disclosure is directed to a thin film resistor having a first resistor layer having a first temperature coefficient of resistance and a second resistor layer on the first resistor layer, the second resistor layer having a second temperature coefficient of resistance different from the first temperature coefficient of resistance. The first temperature coefficient of resistance may be positive while the second temperature coefficient of resistance is negative. The first resistor layer may have a thickness in the range of 50 and 150 angstroms and the second resistor layer may have a thickness in the range of 20 and 50 angstroms.
Public/Granted literature
- US20120049324A1 MULTI-LAYER VIA-LESS THIN FILM RESISTOR Public/Granted day:2012-03-01
Information query
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