Invention Grant
US08436445B2 Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
失效
用于高效光伏器件的钠掺杂CIGS / CIGSS吸收层的制造方法
- Patent Title: Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
- Patent Title (中): 用于高效光伏器件的钠掺杂CIGS / CIGSS吸收层的制造方法
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Application No.: US13308023Application Date: 2011-11-30
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Publication No.: US08436445B2Publication Date: 2013-05-07
- Inventor: Robert D. Wieting
- Applicant: Robert D. Wieting
- Applicant Address: US CA San Jose
- Assignee: Stion Corporation
- Current Assignee: Stion Corporation
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L31/0272
- IPC: H01L31/0272

Abstract:
A method for processing a thin-film absorber material with enhanced photovoltaic efficiency includes forming a barrier layer on a soda lime glass substrate followed by formation of a stack structure of precursor layers. The method further includes subjecting the soda-lime glass substrate with the stack structure to a thermal treatment process with at least H2Se gas species at a temperature above 400° C. to cause formation of an absorber material. By positioning the substrates close together, during the process sodium from an adjoining substrate in the furnace also is incorporated into the absorber layer.
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