Invention Grant
US08436455B2 Stacked structure of semiconductor packages including through-silicon via and inter-package connector, and method of fabricating the same 有权
包括贯穿硅通孔和封装间连接器的半导体封装的堆叠结构及其制造方法

  • Patent Title: Stacked structure of semiconductor packages including through-silicon via and inter-package connector, and method of fabricating the same
  • Patent Title (中): 包括贯穿硅通孔和封装间连接器的半导体封装的堆叠结构及其制造方法
  • Application No.: US12900968
    Application Date: 2010-10-08
  • Publication No.: US08436455B2
    Publication Date: 2013-05-07
  • Inventor: Hyung-Lae Eun
  • Applicant: Hyung-Lae Eun
  • Applicant Address: KR Suwon-Si, Gyeonggi-Do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
  • Agency: F. Chau & Associates, LLC
  • Priority: KR10-2009-0118035 20091201
  • Main IPC: H01L23/02
  • IPC: H01L23/02
Stacked structure of semiconductor packages including through-silicon via and inter-package connector, and method of fabricating the same
Abstract:
A stacked structure of semiconductor packages includes an upper semiconductor package, a lower semiconductor package and inter-package connectors. The upper semiconductor package includes an upper package substrate, a plurality of upper semiconductor chips stacked on the upper package substrate, and conductive upper connection lands formed on a bottom surface of the upper package substrate. The lower semiconductor package includes a lower package substrate, a plurality of lower semiconductor chips stacked on the lower package substrate, and lower through-silicon vias vertically penetrating the lower semiconductor chips. The inter-package connectors may electrically connect the through-silicon vias to the upper connection lands.
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