Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US12564560Application Date: 2009-09-22
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Publication No.: US08436459B2Publication Date: 2013-05-07
- Inventor: Seiji Oka , Yoshiko Obiraki , Takeshi Oi
- Applicant: Seiji Oka , Yoshiko Obiraki , Takeshi Oi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-303311 20081128
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L23/04 ; H01L23/34

Abstract:
A wiring process between the provided power semiconductor module and the external circuit is simple. In the power semiconductor module, a power semiconductor element and a cylindrical conductor are joined to one surface of a lead frame. An opening of the cylindrical conductor is exposed at a surface of transfer molding resin. Sealing with the transfer molding resin is performed such that terminal portions of the lead frame protrude from peripheral side portions of the transfer molding resin. The cylindrical conductor is conductive with a control circuit. The terminal portions of the lead frame are each conductive with a main circuit.
Public/Granted literature
- US20100133667A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2010-06-03
Information query
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