Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13490871Application Date: 2012-06-07
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Publication No.: US08436469B2Publication Date: 2013-05-07
- Inventor: Yuji Tada , Tsuyoshi Hirakawa , Hironori Nakamura , Takayuki Kurokawa
- Applicant: Yuji Tada , Tsuyoshi Hirakawa , Hironori Nakamura , Takayuki Kurokawa
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-080938 20100331
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
A semiconductor device, includes a substrate, a multi-layer wiring layer formed on the substrate, and including a signal line and ground lines extending above the signal line, one of the ground lines extending toward a direction in a predetermined layer and another one of the ground lines extending from the one of the ground lines toward another direction in the predetermined layer, a first pad on the multi-layer wiring layer, a redistribution layer formed on the multi-layer wiring layer, including a second pad, a redistribution line coupling the first and second pads, and an insulation film covering the redistribution line, the redistribution line extending above the ground lines along the one of the ground lines and not extending along the another one of the ground lines. The insulation film includes a hole exposing the second pad above an end portion of the one of the ground lines.
Public/Granted literature
- US08405219B2 Semiconductor device Public/Granted day:2013-03-26
Information query
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