Invention Grant
US08436469B2 Semiconductor device 有权
半导体器件

Semiconductor device
Abstract:
A semiconductor device, includes a substrate, a multi-layer wiring layer formed on the substrate, and including a signal line and ground lines extending above the signal line, one of the ground lines extending toward a direction in a predetermined layer and another one of the ground lines extending from the one of the ground lines toward another direction in the predetermined layer, a first pad on the multi-layer wiring layer, a redistribution layer formed on the multi-layer wiring layer, including a second pad, a redistribution line coupling the first and second pads, and an insulation film covering the redistribution line, the redistribution line extending above the ground lines along the one of the ground lines and not extending along the another one of the ground lines. The insulation film includes a hole exposing the second pad above an end portion of the one of the ground lines.
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