Invention Grant
- Patent Title: Integrated circuits including air gaps around interconnect structures, and fabrication methods thereof
- Patent Title (中): 包括互连结构周围的气隙的集成电路及其制造方法
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Application No.: US12718616Application Date: 2010-03-05
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Publication No.: US08436473B2Publication Date: 2013-05-07
- Inventor: Chii-Ping Chen , Chih-Hao Chen
- Applicant: Chii-Ping Chen , Chih-Hao Chen
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/4763
Abstract:
An integrated circuit includes an interconnect structure at least partially disposed in at least one opening of a dielectric layer that is disposed over a substrate. At least one air gap is disposed between the dielectric layer and the interconnect structure. At least one first liner material is disposed under the at least one air gap. At least one second liner material is disposed around the interconnect structure. The at least one first liner material is disposed between the dielectric layer and at least one second liner material.
Public/Granted literature
- US20110215477A1 INTEGRATED CIRCUITS INCLUDING AIR GAPS AROUND INTERCONNECT STRUCTURES, AND FABRICATION METHODS THEREOF Public/Granted day:2011-09-08
Information query
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