Invention Grant
- Patent Title: Method for manufacturing light emitting device
- Patent Title (中): 发光装置的制造方法
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Application No.: US12890893Application Date: 2010-09-27
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Publication No.: US08436518B2Publication Date: 2013-05-07
- Inventor: Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
- Applicant: Shunpei Yamazaki , Masahiko Hayakawa , Koichiro Kamata , Hiroyuki Tomatsu , Hisao Ikeda , Junichiro Sakata
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2004-316742 20041029
- Main IPC: H01I5/48
- IPC: H01I5/48

Abstract:
An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.
Public/Granted literature
- US20110014730A1 Method for Manufacturing Light Emitting Device Public/Granted day:2011-01-20
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